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p-to220-3-1 p-to252-3-1 p-to263-3-1 low-drop voltage regulator tle 4274 semiconductor group 1 1998-11-01 features ? output voltage tolerance 4 % ? low-drop voltage ? very low current consumption ? short-circuit proof ? reverse polarity proof ? suitable for use in automotive electronics smd = surface mounted device functional description the tle 4274 is a low-drop voltage regulator in a to220 package. the ic regulates an input voltage up to 40 v to v qrated = 5.0 v (v50), 8.5 v (v85) and 10 v (v10). the maximum output current is 400 ma. the ic is short-circuit proof and incorporates temperature protection that disables the ic at over temperature. type ordering code package tle 4274 v10 q67000-a9258 p-to220-3-1 tle 4274 v85 q67000-a9257 p-to220-3-1 tle 4274 v50 q67000-a9256 p-to220-3-1 tle 4274 d v50 q67006-a9331 p-to252-3-1 tle 4274 g v10 q67006-a9261 p-to263-3-1 tle 4274 g v50 q67006-a9259 p-to263-3-1 tle 4274 g v85 q67006-a9260 p-to263-3-1 dimensioning information on external components the input capacitor c i is necessary for compensating line influences. using a resistor of approx. 1 w in series with c i , the oscillating of input inductivity and input capacitance can be damped. the output capacitor c q is necessary for the stability of the regulation circuit. stability is guaranteed at values c q 3 22 m f and an esr of 3 w within the operating temperature range. www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 2 1998-11-01 circuit description the control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. saturation control as a function of the load current prevents any oversaturation of the power element. the ic also incorporates a number of internal circuits for protection against: ? overload ? overtemperature ? reverse polarity pin configuration (top view) figure 1 pin definitions and functions pin no. symbol function 1 i input ; block to ground directly at the ic with a ceramic capacitor. 2gnd ground 3q output ; block to ground with a 3 22 m f capacitor. gnd aep01957 i q p-to220-3-1 p-to263-3-1 gnd i q aep02281 p-to252-3-1 aep02512 i gnd q www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 3 1998-11-01 figure 2 block diagram i 1 aeb01959 gnd 2 q 3 bandgap reference control amplifier sensor temperature buffer saturation control and protection circuit www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 4 1998-11-01 note: maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. absolute maximum ratings t j = C 40 to 150 c parameter symbol limit values unit test condition min. max. voltage regulator input voltage v i C42 45 v C current i i CC C internally limited output voltage v q C1.0 40 v C current i q C C C internally limited ground current i gnd C100maC temperature junction temperature t j C150 cC storage temperature t stg C50 150 cC operating range parameter symbol limit values unit remarks min. max. input voltage v i 5.5 9.0/10.5 40 40/40 v v50 v85/v10 junction temperature t j C40 150 cC thermal resistance junction ambient r thja C65k/wto220 junction ambient r thja C70k/wto252 1) , to263 1) soldered in, min. footprint junction case r thjc C4k/wC www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 5 1998-11-01 characteristics v i = 13.5 v; C 40 c < t j <150 c (unless otherwise specified) parameter symbol limit values unit measuring conditions min. typ. max. output voltage v50-version v q 4.8 5 5.2 v 5ma< i q <400ma 6v< v i <40v output voltage v85-version v q 8.16 8.5 8.84 v 5ma< i q <400ma 9.5 v < v i <40v output voltage v10-version v q 9.6 10 10.4 v 5ma< i q <400ma 11 v < v i <40v output current limitation 1) i q 400 600 C ma C current consumption; i q = i i C i q i q C 100 220 m a i q =1ma current consumption; i q = i i C i q i q i q C C 8 20 15 30 ma ma i q = 250 ma i q = 400 ma drop voltage 1) v dr C 250 500 mv i q = 250 ma v dr = v i C v q load regulation d v q C 2050mv i q =5ma to 400 ma line regulation d v q C 1025mv d v l = 12 v to 32 v i q =5ma power supply ripple rejection psrr C60Cdb f r = 100 hz; v r =0.5 v ss temperature output voltage drift C0.5Cmv/kC 1) measured when the output voltage v q has dropped 100 mv from the nominal value obtained at v i =13.5v. dv q dt ----------- www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 6 1998-11-01 figure 3 measuring circuit figure 4 application circuit tle 4274 input i 100 nf m 100 f v i c i i 2 1 c 22 f m q 3 q i aes01960 v q r l output tle 4274 c input i 1 2 aes01961 c 3 q output www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 7 1998-11-01 drop voltage v dr versus output current i q current consumption i q versus output current i q (high load) output current i q versus input voltage v i current consumption i q versus output current i q (low load) typical performance characteristics (v50, v85 and v10): 0 0 100 400 600 200 v dr mv 400 200 i q ma aed01962 j t = 25 c v dr = qnom-0.1 v v j t = 125 c 300 100 300 0 0 200 40 60 20 ma 600 400 i q ma aed02267 v i q i = 13.5 v t = 25 c j 100 300 10 30 20 010 0 ma 800 q i = 25 c t j 50 v 30 40 v i aed01963 200 400 600 = 0 v v q 30 0 01020 ma 40 60 q i 0.1 0.2 0.3 ma 0.6 0.4 i q aed02268 t v = 25 c = 13.5 v i j www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 8 1998-11-01 output voltage v q versus junction temperature t j output voltage v q versus input voltage v i current consumption i q versus input voltage v i input current i i versus input voltage v i typical performance characteristics (v50): 4.90 4.80 4.70 40 -40 0 4.60 5.00 v 5.20 5.10 q 160 c 80 120 t j aed01966 v i = 13.5 v v 3 2 1 4 0 2 0 4 v 6 5 q 10 68 v i aed01968 v v v q v i v q = = 20 = 25 c r l j t w 0 0 20 30 10 ma 50 aed02269 q i 10 20 30 v r l = 20 w v i t j = 25 c 0 1.5 1.0 0.5 -50 -25 -2 0 ma 3.5 3.0 2.5 2.0 i i t r j l = 25 c w = 10 k v 25 50 v i aed01977 www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 9 1998-11-01 output voltage v q versus junction temperature t j output voltage v q versus input voltage v i current consumption i q versus input voltage v i input current i i versus input voltage v i typical performance characteristics for v85: 7.5 8.0 0 -40 40 9.0 8.5 q v = 13.5 v v i v 120 80 c 160 t j aed01970 6 4 08 0 2 4 r t q v q v 8 i = v v 10 12 v 16 12 20 v i = 25 c = 34 l j w aed01972 q v 0 0 20 30 10 ma 50 aed02270 q i 10 20 30 v r l = 20 w v i t j = 25 c 0 1.5 1.0 0.5 -50 -25 -2 0 ma 3.5 3.0 2.5 2.0 i i t r j l = 25 c w = 8.5 k v 25 50 v i aed01973 www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 10 1998-11-01 output voltage v q versus junction temperature t j output voltage v q versus input voltage v i current consumption i q versus input voltage v i input current i i versus input voltage v i typical performance characteristics for v10: 9.0 9.5 0 -40 40 10.5 10.0 q v = 13.5 v v i v 120 80 c 160 t j aed01974 6 4 08 0 2 4 r t q v q v 8 i = v v 10 12 v 16 12 20 v i = 25 c = 34 l j w aed01976 q v 0 0 20 30 10 ma 50 aed02270 q i 10 20 30 v r l = 20 w v i t j = 25 c 0 1.5 1.0 0.5 -50 -25 -2 0 ma 3.5 3.0 2.5 2.0 i i t r j l = 25 c w = 10 k v 25 50 v i aed01977 www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 11 1998-11-01 package outlines gpt05155 a b a 0.25 m typical 9.8 0.15 2.8 1) 15.65 0.3 13.4 0...0.15 2.54 0.75 0.1 1.05 0.1 1.27 4.4 b 9.25 0.2 0.05 1) all metal surfaces tin plated, except area of cut. c 0.2 17 0.3 8.5 1) 10 0.2 3.7 -0.15 c 2.4 0.5 0.1 0.2 4.55 13.5 0.5 3x p-to220-3-1 (plastic transistor outline) sorts of packing package outlines for tubes, trays etc. are contained in our data book package information dimensions in mm www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 12 1998-11-01 gpt09051 5.4 0.1 -0.10 6.5 +0.15 a 0.5 9.9 6.22 -0.2 1 0.1 0.15 0.8 0.15 0.1 max per side 0.75 2.28 4.57 +0.08 -0.04 0.9 2.3 -0.10 +0.05 b min 0.51 0.1 1 +0.08 -0.04 0.5 0...0.15 b a 0.25 m 0.1 all metal surfaces tin plated, except area of cut. 3x p-to252-3-1 (plastic transistor single outline) sorts of packing package outlines for tubes, trays etc. are contained in our data book package information dimensions in mm smd = surface mounted device www.datasheet.net/ datasheet pdf - http://www..co.kr/
tle 4274 semiconductor group 13 1998-11-01 a 8? max. b a 0.25 m 0.1 typical 9.8 0.15 0.2 10 8.5 1) 8 1) (15) 0.2 9.25 0.3 1 0...0.15 5.08 2.54 0.75 0.1 1.05 0.1 1.27 4.4 b 0.5 0.1 0.3 2.7 4.7 0.5 0.05 1) 0.1 all metal surfaces tin plated, except area of cut. 2.4 gpt09057 p-to263-3-1 (plastic transistor single outline) sorts of packing package outlines for tubes, trays etc. are contained in our data book package information dimensions in mm smd = surface mounted device www.datasheet.net/ datasheet pdf - http://www..co.kr/

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